SMG1330N 2.0a , 30v , r ds(on) 58 m ? n-channel enhancement mode mosfet elektronische bauelemente 29-aug-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provi de low r ds(on) and to ensure minimal power loss and heat dissipat ion. features low r ds(on) provides higher efficiency and extends battery lif e. low thermal impedance copper leadframe sc59 saves board space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as compu ters, printers, pcmcia cards, cellular and cordless telep hones. package information package mpq leader size sc-59 3k 7 inch absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 1 t a =25 c i d 2.0 a t a =70 c 1.7 a pulsed drain current 2 i dm 20 a continuous source current (diode conduction) 1 i s 1.6 a power dissipation 1 t a =25 c p d 0.34 w t a =70 c 0.22 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance ratings maximum junction to ambient 1 t Q 5 sec r ja 100 c / w steady state 166 notes: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction temperatu re. sc-59 ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2. 25 3 . 0 0 h 0.40 ref. c 1.3 0 1. 7 0 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 top view 1 2 3
SMG1330N 2.0a , 30v , r ds(on) 58 m ? n-channel enhancement mode mosfet elektronische bauelemente 29-aug-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250ua gate-body leakage i gss - - 100 na v ds =0, v gs = 20v zero gate voltage drain current i dss - - 1 a v ds =24v, v gs =0 - - 10 v ds =24v, v gs =0, t j =55 c on-state drain current 1 i d(on) 10 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 58 m v gs =10v, i d =2a - - 82 v gs =4.5v, i d =1.7a forward transconductance 1 g fs - 11.3 - s v ds =10v, i d =2a diode forward voltage v sd - 0.75 - v i s =1.6a, v gs =0 dynamic 2 total gate charge q g - 7.5 - nc v ds =10v, v gs =5v, i d =2a gate-source charge q gs - 0.6 - gate-drain charge q gd - 1 - turn-on delay time t d(on) - 8 - ns v dd =10v, v gen =4.5v, r l =15 , i d =1a rise time t r - 24 - turn-off delay time t d(off) - 35 - fall time t f - 10 - notes: 1 pulse test pw Q 300 s duty cycle Q 2%. 2 guaranteed by design, not subject to production t esting.
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